Interconnect structures and methods of forming the same

ABSTRACT

Embodiments described herein relate generally to one or more methods for forming an interconnect structure, such as a dual damascene interconnect structure comprising a conductive line and a conductive via, and structures formed thereby. In some embodiments, an interconnect opening is formed through one or more dielectric layers over a semiconductor substrate. The interconnect opening has a via opening and a trench over the via opening. A conductive via is formed in the via opening. A nucleation enhancement treatment is performed on one or more exposed dielectric surfaces of the trench. A conductive line is formed in the trench on the one or more exposed dielectric surfaces of the trench and on the conductive via.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation-in-part of U.S. patent applicationSer. No. 15/993,726, filed on May 31, 2018, entitled “InterconnectStructures and Methods of Forming the Same,” which claims the benefit ofand priority to U.S. Provisional Patent Application No. 62/592,646,filed on Nov. 30, 2017, entitled “Interconnect Structures and Methods ofForming the Same,” which are incorporated herein by reference in theirentireties.

This application also claims the benefit of and priority to U.S.Provisional Patent Application Ser. No. 62/774,637, filed on Dec. 3,2018, entitled “Interconnect Structures and Methods of Forming theSame,” which is incorporated herein by reference in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (e.g., the number of interconnecteddevices per chip area) has generally increased while geometry size(e.g., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. However, scaling down has also led to challenges thatmay not have been presented by previous generations at largergeometries.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 10 are cross-sectional views of respective intermediatestructures during an example method for forming an interconnectstructure in accordance with some embodiments.

FIG. 11 is a flow chart of an example method for forming an interconnectstructure in accordance with some embodiments.

FIG. 12 is a flow chart of an example Atomic Layer Etch (ALE) process inaccordance with some embodiments.

FIGS. 13 through 18 are cross-sectional views of various details and/ormodifications to a portion of the intermediate structure of FIG. 6 inaccordance with some embodiments.

FIGS. 19 through 20 are cross-sectional views of respective intermediatestructures during an example method for forming an interconnectstructure in accordance with some other embodiments.

FIG. 21 is a flow chart of an example cleaning process in accordancewith some embodiments.

FIG. 22 is a cross-sectional view of a resulting interconnect structurein accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments described herein relate generally to one or more methods forforming an interconnect structure, such as a dual damascene interconnectstructure comprising a conductive line and a conductive via, insemiconductor processing. Generally, a conductive via may be selectivelydeposited in a via opening for the interconnect structure, a nucleationenhancement treatment may then be performed, and a conductive fillmaterial may subsequently be deposited in a trench for the interconnectstructure. The nucleation enhancement treatment can cause the depositionof the conductive fill material to be bottom-up and/or conformal, suchas by nucleating and being deposited on dielectric surfaces. Someembodiments can obviate using a seed layer for depositing the conductivefill material, and can further obviate using a high resistancemetal-containing barrier layer in the interconnect structure. Hence,some process windows for forming the interconnect structure can beincreased, and a resistance of the interconnect structure can bedecreased. In some embodiments, a cleaning process is performed beforethe nucleation enhancement treatment, to clean exposed surfaces of thevia opening for the interconnect structure. The cleaning process caninclude multiple processes, such as physical and chemical removalprocesses. Some embodiments can also help remove native oxides that maybe formed in the via opening, and may reduce the chances of formingvoids during deposition of the conductive via. Hence, the resistance ofthe interconnect structure can be further decreased. Other advantages orbenefits may also be achieved.

Some embodiments described herein are in the context of Back End Of theLine (BEOL) processing. Other processes and structures within the scopeof other embodiments may be performed in other contexts, such as inMiddle End Of the Line (MEOL) processing and other contexts. Variousmodifications are discussed with respect to disclosed embodiments;however, other modifications may be made to disclosed embodiments whileremaining within the scope of the subject matter. A person havingordinary skill in the art will readily understand other modificationsthat may be made that are contemplated within the scope of otherembodiments. Although method embodiments may be described in aparticular order, various other method embodiments may be performed inany logical order and may include fewer or more steps than what isdescribed herein.

FIGS. 1 through 10 illustrate cross-sectional views of respectiveintermediate structures during an example method for forming aninterconnect structure in accordance with some embodiments. FIG. 11 is aflow chart of the example method 200 for forming the interconnectstructure in accordance with some embodiments.

FIG. 1 and operation 202 of the method 200 illustrate the formation ofdielectric layers over a semiconductor substrate 20. FIG. 1 illustratesa first dielectric layer 22 over the semiconductor substrate 20. Thesemiconductor substrate 20 may be or include a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. In someembodiments, the semiconductor material of the semiconductor substrate20 may include elemental semiconductor like silicon (Si) and germanium(Ge); a compound semiconductor; an alloy semiconductor; or a combinationthereof.

Various devices may be on the semiconductor substrate 20. For example,the semiconductor substrate 20 may include Field Effect Transistors(FETs), such as Fin FETs (FinFETs), planar FETs, vertical gate allaround FETs (VGAA FETs), or the like; diodes; capacitors; inductors; andother devices. Devices may be formed wholly within the semiconductorsubstrate 20, in a portion of the semiconductor substrate 20 and aportion of one or more overlying layers, and/or wholly in one or moreoverlying layers, for example. Processing described herein may be usedto form and/or to interconnect the devices to form an integratedcircuit. The integrated circuit can be any circuit, such as for anApplication Specific Integrated Circuit (ASIC), a processor, memory, orother circuit.

The first dielectric layer 22 is above the semiconductor substrate 20.The first dielectric layer 22 may be directly on the semiconductorsubstrate 20, or any number of other layers may be disposed between thefirst dielectric layer 22 and the semiconductor substrate 20. Forexample, the first dielectric layer 22 may be or include an Inter-MetalDielectric (IMD) or an Inter-Layer Dielectric (ILD). The firstdielectric layer 22, for example, may be or comprise a low-k dielectrichaving a k-value less than about 4.0, such as about 2.0 or even less. Insome examples, the first dielectric layer 22 comprises silicon oxide,phosphosilicate glass (PSG), borophosphosilicate glass (BPSG),fluorosilicate glass (FSG), SiO_(x)C_(y), silicon carbon material, acompound thereof, a composite thereof, or a combination thereof.

A conductive feature 24 is in and/or through the first dielectric layer22. The conductive feature 24 may be or include a conductive line and/ora conductive via, a gate structure of a transistor, or a contact plug toa gate structure of a transistor and/or to a source/drain region of atransistor. In some examples, the first dielectric layer 22 is an IMD,and the conductive feature 24 may include a conductive line and/or aconductive via (collectively or individually, “interconnect structure”).The interconnect structure may be formed by forming an opening and/orrecess through and/or in the IMD, for example, using a damasceneprocess. Some examples of forming an interconnect structure aredescribed further below, although other processes and interconnectstructures may be implemented. In other examples, the first dielectriclayer 22 may include an ILD, and the conductive feature 24 may include agate electrode (e.g., tungsten, cobalt, etc.) in the ILD formed using areplacement gate process, for example. In another example, the firstdielectric layer 22 may be an ILD, and the conductive feature 24 mayinclude a contact plug. The contact plug may be formed by forming anopening through the ILD to, for example, a gate electrode and/orsource/drain region of a transistor formed on the semiconductorsubstrate 20. The contact plug can include an adhesion layer (e.g., Ti,etc.), a barrier layer (e.g., TiN, etc.) on the adhesion layer, and aconductive fill material (e.g., tungsten, cobalt, etc.) on the barrierlayer. The contact plug can also be made of a less diffusive metal liketungsten, Mo, or Ru without a barrier layer.

A first etch stop layer (ESL) 26 is over the first dielectric layer 22and the conductive feature 24. Generally, an ESL can provide a mechanismto stop an etch process when forming, e.g., contacts or conductive vias.An ESL may be formed of a dielectric material having a different etchselectivity from adjacent layers or components. The first ESL 26 isdeposited on the top surfaces of the first dielectric layer 22 and theconductive feature 24. The first ESL 26 may comprise or be siliconnitride, silicon carbon nitride, silicon carbon oxide, carbon nitride,the like, or a combination thereof, and may be deposited by ChemicalVapor Deposition (CVD), Plasma Enhanced CVD (PECVD), Atomic LayerDeposition (ALD), or another deposition technique. A thickness of thefirst ESL 26, in some examples, is in a range from about 3 nm to about10 nm.

A second dielectric layer 28 is over the first ESL 26. For example, thesecond dielectric layer 28 may be or include an IMD. The seconddielectric layer 28 is deposited on the top surface of the first ESL 26.The second dielectric layer 28, for example, may be or comprise a low-kdielectric having a k-value less than about 4.0, such as about 2.0 oreven less. In some examples, the second dielectric layer 28 comprisessilicon oxide, PSG, BPSG, FSG, SiO_(x)C_(y), silicon carbon material, acompound thereof, a composite thereof, or a combination thereof. Thesecond dielectric layer 28 may be deposited using a CVD, such as PECVDor Flowable CVD (FCVD); spin-on coating; or another depositiontechnique. In some examples, a Chemical Mechanical Planarization (CMP)or another planarization process may be performed to planarize the topsurface of second dielectric layer 28. A thickness of the seconddielectric layer 28, in some examples, is in a range from about 4 nm toabout 30 nm.

A second ESL 30 is over the second dielectric layer 28. The second ESL30 is deposited on a top surface of the second dielectric layer 28. Thesecond ESL 30 may comprise or be silicon nitride, silicon carbonnitride, silicon carbon oxide, carbon nitride, the like, or acombination thereof, and may be deposited by CVD, PECVD, ALD, or anotherdeposition technique. A thickness of the second ESL 30, in someexamples, is in a range from about 3 nm to about 10 nm.

A third dielectric layer 32 is over the second ESL 30. For example, thethird dielectric layer 32 may be or include an IMD. The third dielectriclayer 32 is deposited on the top surface of the second ESL 30. The thirddielectric layer 32, for example, may be or comprise a low-k dielectrichaving a k-value less than about 4.0, such as about 2.0 or even less. Insome examples, the third dielectric layer 32 comprises silicon oxide,PSG, BPSG, FSG, SiO_(x)C_(y), silicon carbon material, a compoundthereof, a composite thereof, or a combination thereof. The thirddielectric layer 32 may be deposited using a CVD, such as PECVD or FCVD;spin-on coating; or another deposition technique. In some examples, aCMP or another planarization process may be performed to planarize thetop surface of third dielectric layer 32. A thickness of the thirddielectric layer 32, in some examples, is in a range from about 20 nm toabout 50 nm, such as about 45 nm.

The configuration of the second dielectric layer 28, second ESL 30, andthird dielectric layer 32 of FIG. 1 is an example. In other examples,the second ESL 30 may be omitted between the second dielectric layer 28and the third dielectric layer 32. Further, in some examples, a singledielectric layer may be formed in the place of the second dielectriclayer 28, second ESL 30, and third dielectric layer 32. A person havingordinary skill in the art will readily understand these and othermodifications that may be made.

FIG. 2 and operation 204 of the method 200 illustrate the formation of avia opening 42 and a trench 40 in and/or through the first ESL 26,second dielectric layer 28, second ESL 30, and third dielectric layer32. The via opening 42 and trench 40 can be formed usingphotolithography and etch processes, such as in a dual damasceneprocess. For example, a photo resist can be formed on the thirddielectric layer 32, such as by using spin-on coating, and patternedwith a pattern corresponding to the trench 40 by exposing the photoresist to light using an appropriate photomask. Exposed or unexposedportions of the photo resist may then be removed depending on whether apositive or negative resist is used. The pattern of the photo resist maythen be transferred to the third dielectric layer 32, such as by using asuitable etch process, which forms the trench 40 in the third dielectriclayer 32. The etch process may include a reactive ion etch (RIE),neutral beam etch (NBE), inductive coupled plasma (ICP) etch, the like,or a combination thereof. The etch process may be anisotropic. Thesecond ESL 30 may be used as an etch stop for the etch process.Subsequently, the photo resist is removed in an ashing or wet stripprocess, for example. Then, another photo resist can be formed on thethird dielectric layer 32 and in the trench 40, such as by using spin-oncoating, and patterned with a pattern corresponding to the via opening42 by exposing the photo resist to light using an appropriate photomask.The pattern of the photo resist may then be transferred through thesecond ESL 30, second dielectric layer 28, and first ESL 26, such as byusing one or more suitable etch process, which forms the via opening 42through the second ESL 30, second dielectric layer 28, and first ESL 26.The etch process may include a RIE, NBE, ICP etch, the like, or acombination thereof. The etch process may be anisotropic. Subsequently,the photo resist is removed in an ashing or wet strip process, forexample.

The sidewalls of the trench 40 and the via opening 42 are illustrated asbeing substantially vertical with rounding at corners. For example,linear portions of the sidewalls form an angle measured interior to therespective second dielectric layer 28 or third dielectric layer 32 thatis in a range from about 85° to about 90°, such as about 85° to about89°, and more particularly about 87°. In other examples, sidewalls ofone or both of the trench 40 and the via opening 42 may be vertical ormay taper together in a direction toward or away from the bottom of thevia opening 42. For example, the via opening 42 may have a positivetaper profile or a reentrant profile. Various examples of configurationsfor the via opening 42, and details thereof, are illustrated in anddescribed with respect to FIGS. 13 through 18.

In the example configuration of FIG. 2, the trench 40 has a first widthW1 in a plane of a top surface of the third dielectric layer 32 and hasa second width W2 along a bottom surface of the trench 40. The firstwidth W1, in some examples, is in a range from about 20 nm to about 40nm, and the second width W2, in some examples, is in a range from about18 nm to about 36 nm. The trench has a depth that is, in this example,equal to a first thickness T1 of the third dielectric layer 32. Thefirst thickness T1, in some examples, is in a range from about 20 nm toabout 50 nm, as stated previously. A first aspect ratio of the firstthickness T1 to the first width W1 can be in a range from about 0.5 toabout 2.5, and a second aspect ratio of the first thickness T1 to thesecond width W2 can be in a range from about 0.56 to about 2.78.

In an example configuration where the sidewalls of the trench arevertical, widths corresponding to the first width W1 and the secondwidth W2 in FIG. 2 are equal, and each can be in a range from about 20nm to about 40 nm. An aspect ratio of the first thickness T1 to thewidth of the trench 40, in this example, can be in a range from about0.5 to about 2.5. In an example configuration where the sidewalls of thetrench taper (e.g., a positive taper profile), the width correspondingto the first width W1 in FIG. 2 may be a function of the width(W_(lower)) corresponding to the second width W2 in FIG. 2 and the angle(θ) of the sidewall measured interior to the third dielectric layer 32(e.g., W_(upper)=W_(lower)+[2T₁(tan θ)⁻¹]). The width corresponding tothe second width W2 in FIG. 2 can be in a range from about 18 nm toabout 36 nm, and the angle can be in a range from about 85° to about89°, or may be less than 85°. An aspect ratio of the first thickness T1to the width corresponding to the second width W2 of FIG. 2 can be in arange from about 0.56 to about 2.78.

A person having ordinary skill in the art will readily understand thatthe dimensions, ratios, and angles described herein are merely examples.Dimensions, ratios, and angles can vary based on technology generationnodes in which various aspects are implemented and/or based on variousprocesses used. Such variations are within the scope of this disclosure.

FIG. 3 and operation 206 of the method 200 illustrate the formation of aliner layer 50 conformally along sidewalls of the via opening 42 and thetrench 40, along respective bottom surfaces of the via opening 42 andthe trench 40, and along a top surface of the third dielectric layer 32.The liner layer 50 can be formed by conformal deposition. The linerlayer 50 may be or comprise silicon nitride (SiN), silicon oxycarbide(SiOC), silicon carbon nitride (SiCN), silicon oxygen carbon nitride(SiOCN), a silicon-containing low-k dielectric, a carbon-containinglow-k dielectric, the like, or a combination thereof, and may bedeposited by CVD, ALD, or another deposition technique. A thickness ofthe liner layer 50, in some examples, is in a range from about 1 nm toabout 4 nm, and more particularly, from about 2 nm to about 3 nm.

FIG. 4 and operation 208 of the method 200 illustrates the formation ofrespective liners 52 along sidewalls of the via opening 42 and alongsidewalls of the trench 40 from the liner layer 50. The liners 52 can beformed by anisotropically etching the liner layer 50. The etch processfor anisotropically etching the liner layer 50 may include a RIE, NBE,ICP etch, the like, or a combination thereof. The liners 52, and thesecond ESL 30, if implemented, may be diffusion barriers that can reduceor prevent out-diffusion of a conductive fill material subsequentlydeposited in the trench 40 and via opening 42 to, e.g., the seconddielectric layer 28 and third dielectric layer 32. The liners 52 andsecond ESL 30 can form a dielectric diffusion barrier.

Profiles of the liners 52 can vary depending on, among other things, theprofiles of the sidewalls of the trench 40 and via opening 42. In theexample of FIG. 4, at rounded corners at the sidewalls where the slopeof the corner is approximately 45°, a second thickness T2 cansubstantially equal the thickness (t_(liner)) of the liner layer 50minus the thickness (t_(etched)) removed by the anisotropic etch in avertical direction times the square root of two divided by two (e.g.,t_(liner)−[t_(etched)×2^(−(1/2))]). Further, a third thickness T3 alonga substantially vertical portion of a respective sidewall at the bottomof the trench 40 or via opening 42 can be equal to the thickness of theliner layer 50. In some examples, the second thickness T2 is in a rangefrom about 0.3 nm to about 1.2 nm, and the third thickness T3 is in arange from about 1 nm to about 4 nm. A person having ordinary skill inthe art will readily understand the relationship that the thicknesses ofthe liners 52 can have with the underlying slope angles of thesidewalls.

In an example configuration where the sidewalls of the trench arevertical, thicknesses corresponding to the second thickness T2 and thethird thickness T3 in FIG. 4 are equal (which may further besubstantially equal to the thickness of the liner layer 50), and eachcan be in a range from about 1 nm to about 4 nm. In an exampleconfiguration where the sidewalls of the trench taper (e.g., a positivetaper profile) at a constant slope angle, the thicknesses correspondingto the second thickness T2 and the third thickness T3 in FIG. 4 areequal. The thicknesses can be a function of the thickness of the linerlayer 50 and the angle of the sidewall similar to described above as aperson having ordinary skill in the art would understand. The widthcorresponding to the second width W2 in FIG. 2 can be in a range fromabout 1 nm to about 4 nm.

Profiles of the liners 52 can further vary depending on step coverage ofthe deposition process used to deposit the liner layer 50. For example,a thickness of the liner 52 along sidewalls of the via opening 42 canvary from a thickness of the liner 52 along sidewalls of the trench 40due to step coverage variation.

In operation 210 of the method 200, after forming the liners 52,optionally, a cleaning process may be performed to clean exposedsurfaces of, e.g., the trench 40 and via opening 42. The cleaningprocess can include a plasma treatment, an etch process, anothercleaning process, or a combination thereof. In an example, the cleaningprocess includes a plasma treatment (operation 212) followed by anAtomic Layer Etch (ALE) (operation 214). The plasma treatment inoperation 212 can include using a hydrogen (H₂) gas with a carrier gas,such as argon (Ar). The plasma treatment, in some instances, can reducean oxide that may be formed on a surface of the conductive feature 24exposed through the via opening 42 and can remove organic material thatmay be formed on various surfaces. A flow rate of the hydrogen gas inthe plasma treatment can be in a range from about 5 sccm to about 1,000sccm, and a flow rate of the carrier gas in the plasma treatment can bein a range from about 0 sccm to about 1,000 sccm. A pressure of theplasma treatment can be in a range from about 10 mTorr to about 200mTorr. A temperature of the plasma treatment can be in a range fromabout −20° C. to about 100° C. A power of the plasma generator of theplasma treatment can be in a range from about 20 W to about 400 W, and afrequency of the plasma generator can be about 13.56 MHz or greater. Thesubstrate during the plasma treatment can be biased in a range fromabout 20 V to about 100 V. A duration of the plasma treatment can be ina range from about 5 seconds to about 120 seconds.

The ALE in operation 214 is illustrated in further detail in FIG. 12.The ALE in operation 214 can include performing multiple cycles, such asin a range from 2 cycles to 25 cycles. A cycle of the ALE can includesequentially flowing a reactant gas (operation 250), such as borontrichloride (BCl₃) gas, with a carrier gas (e.g., argon (Ar)); purging(operation 252) the reactant gas; flowing an etchant gas (operation254), such as hydrogen (H₂) gas, with a carrier gas (e.g., argon (Ar))and possibly with plasma enhancement; and purging (operation 256) theetchant gas. In some examples, the reactant gas, e.g., boron trichloride(BCl₃) gas, is adsorbed on dielectric surfaces to form a monolayer andis not significantly adsorbed on metal surfaces, and the monolayer isetched by the flowing of the etchant gas, e.g., hydrogen (H₂) gas. Anexample provided here implements boron trichloride (BCl₃) gas as thereactant gas and hydrogen (H₂) gas as the etchant gas; other gases maybe used. During the flowing of the boron trichloride (BCl₃) gas, a flowrate of the boron trichloride (BCl₃) gas can be in a range from about 20sccm to about 180 sccm, and a flow rate of the carrier gas can be in arange from about 200 sccm to about 800 sccm. Further, during the flowingof the boron trichloride (BCl₃) gas, a pressure of the ALE can be in arange from about 15 mTorr to about 100 mTorr, and a temperature of theALE can be in a range from about −20° C. to about 60° C. After the borontrichloride is purged, the hydrogen (H₂) gas begins to flow and a plasmais ignited. During the flowing of the hydrogen (H₂) gas, a flow rate ofthe hydrogen (H₂) gas can be in a range from about 5 sccm to about 1,000sccm, and a flow rate of the carrier gas can be in a range from about 50sccm to about 400 sccm. Further, during the flowing of the hydrogen (H₂)gas, a pressure of the ALE can be in a range from about 10 mTorr toabout 200 mTorr, and a temperature of the ALE can be in a range fromabout −20° C. to about 20° C. A power of the plasma generator of the ALEcan be in a range from about 10 W to about 800 W, and a frequency of theplasma generator can be about 13.56 MHz or greater. The substrate duringthe plasma of the ALE can be biased in a range from about 50 V to about300 V.

The process described above is one example of the cleaning process(operation 210). In some embodiments (described further below withrespect to FIGS. 19 through 22), the cleaning process includes a plasmatreatment, followed by a halide soak, followed by a reduction treatment.

In operation 216 of the method 200, after the cleaning process inoperation 210 is optionally performed, a selectivity enhancementtreatment can optionally be performed on exposed dielectric surfaces of,e.g., the trench 40 and via opening 42. The selectivity enhancementtreatment can, for example, treat and/or passivate dielectric surfacesso that a subsequent deposition of metal has a higher selectivity todeposit the metal at a greater rate on a metallic surface than thedielectric surfaces compared to without such treatment. For example, theselectivity enhancement treatment can cause the dielectric surfaces tobe hydrophobic, which can improve selectivity during a subsequentdeposition of metal. The selectivity enhancement treatment can includeflowing a silicon-containing hydrocarbon gas over the dielectricsurfaces. The selectivity enhancement treatment can be atri-methylsiloxy (TMS) treatment, a di-methylsiloxy (DMS) treatment, thelike, or a combination thereof. Example silicon-containing hydrocarbongases include 1,1,1,3,3,3-hexamethyldisilazane (HDMS),chlorotrimethylsilane (TMCS), N, O-bis(trimethylsilyl)acetamide (BSA),N-(trimethylsilyl)dimethylamine (TMS-DMA), TMS-imidazole (SIM,N-trimethylsilylimidazole), 1,1,3,3-tetramethyldisilazane (TMDS),chlorodimethylsilane (DMCS), the like, or a combination thereof. Theselectivity enhancement treatment can cause a silylation process inwhich an atom or group of atoms terminated at the dielectric surface canbe substituted by a species of the silicon-containing hydrocarbon, whichcan cause the dielectric surface to be rendered hydrophobic. A flow rateof the silicon-containing hydrocarbon can be in a range from about 5sccm to about 100 sccm, and a flow rate of a carrier gas flowed with thesilicon-containing hydrocarbon can be in a range from about 0 sccm toabout 400 sccm. A pressure during the flowing the silicon-containinghydrocarbon can be in a range from about 1 mTorr to about 100 mTorr, anda temperature can be in a range from about 20° C. to about 300° C. Theselectivity enhancement treatment can treat or passivate the exposeddielectric surfaces of the liners 52, the second ESL 30, and the thirddielectric layer 32 to improve selectivity of a subsequent selectivedeposition on the conductive feature 24.

FIG. 5 and operation 218 of the method 200 illustrate the formation of aconductive via 60 in the via opening 42. The formation of the conductivevia 60 can include a selective deposition. The selective deposition canuse the conductive feature 24 exposed through the via opening 42 as aseed, for example. The selective deposition can include electrolessdeposition or plating, selective CVD, or another technique. Theconductive via 60 can be or include a metal, such as cobalt (Co),ruthenium (Ru), the like, or a combination thereof. In an example, theconductive via 60 is cobalt deposited using electroless deposition orplating. The electroless deposition or plating of cobalt (Co) may be ata temperature in a range equal to or less than about 200° C., such as ina range from room temperature (e.g., about 23° C.) to about 200° C. Theselective CVD can include using a precursor gas comprising Ru₃(CO)₁₂,C₁₀H₁₀Ru, C₇H₉RuC₇H₉, Ru(C₅(CH₃)₅)₂, the like, or a combination thereof,and a carrier gas, such as argon (Ar). A flow rate of the precursor gascan be in a range from about 5 sccm to about 100 sccm, and a flow rateof the carrier gas can be in a range from about 10 sccm to about 400sccm. A pressure of the selective CVD can be in a range from about 0.2mTorr to about 20 mTorr. A temperature of the selective CVD can be lessthan or equal to about 200° C., such as in a range from room temperature(e.g., about 23° C.) to about 200° C.

As illustrated in FIG. 5, an upper surface of the conductive via 60 isconvex. In other examples, an upper surface of the conductive via 60 canbe concave or planar. Various examples of configurations for theconductive via 60 formed in the via opening 42, and details thereof, areillustrated in and described with respect to FIGS. 13 through 18.

As illustrated in FIG. 5, some residual deposition sites 62 may beformed during the selective deposition used to form the conductive via60. The residual deposition sites 62 may be formed on various surfaces,such as surfaces of the second ESL 30 and the liner 52 in the trench 40.

FIG. 6 and operation 220 of the method 200 illustrate the performance ofa selective etch back that removes the residual deposition sites 62. Theetch back can be a dry (e.g., plasma) etch process, a wet etch process,or a combination thereof. A plasma etch process can include using afluorocarbon (C_(x)F_(y)) gas, a chlorofluorocarbon (C_(x)Cl_(y)F_(z))gas, a carbon chloride (C_(x)Cl_(y)) gas, the like or a combinationthereof. A wet etch process can include using one or more solutions ofstandard clean-1 (SC1), standard clean-2 (SC2), sulfuric acid-hydrogenperoxide mixture (SPM), diluted hydrofluoric (dHF) acid, hydrogenperoxide (H₂O₂), buffered oxide etch (BOE) solution, hydrochloric (HCl)acid, the like, or a combination thereof. A temperature of the solutioncan be in a range from about 20° C. to about 90° C., and a duration ofimmersion of the substrate in the solution can be in a range from about10 seconds to about 120 seconds.

FIG. 7 and operation 222 of the method 200 illustrate the performance ofa nucleation enhancement treatment along, e.g., exposed surfaces in thetrench 40 including an upper surface of the conductive via 60, to formtreated surfaces 70. Generally, the nucleation enhancement treatmentbreaks bonds along, e.g., exposed surfaces in the trench 40 to enhancethe ability for adsorption of material in a subsequent depositionprocess. In some examples, the nucleation enhancement treatment includessputtering (operation 224), implantation (operation 226), a plasmatreatment (operation 228), an ultra-violet (UV) treatment (operation230), plasma doping (operation 232), the like, or a combination thereof.The nucleation enhancement treatment can be directional (e.g.,anisotropic) or conformal (e.g., isotropic). In some examples, thenucleation enhancement treatment can treat, e.g., vertical surfaces,albeit to a lesser extent than, e.g., horizontal surfaces. The extent towhich the nucleation enhancement treatment is performed (e.g., theextent to which bonds are broken along surfaces) can affect a number ofnucleation sites and, therefore, at least an initial deposition rate fora later deposited conductive fill material 80, as will be describedsubsequently. Generally, the more bonds that are broken and the moredangling bonds that are created, the more nucleation sites may beavailable for adsorption and nucleation of the conductive fill material80 for an increased deposition rate, at least initially in thedeposition. In some examples, the nucleation enhancement treatment canbe directional to treat substantially only horizontal surfaces (e.g., atop surface of the second ESL 30 and upper surface of the conductive via60 exposed by the trench 40), which can enable bottom-up deposition of aconductive fill material in the trench 40 and reduce seams and voidsbeing formed in the conductive fill material in the trench 40.

In an example, the nucleation enhancement treatment is sputtering(operation 224) using argon (Ar) gas. A flow rate of the argon gas canbe in a range from about 10 sccm to about 2,000 sccm. A pressure of thesputtering can be in a range from about 0.5 mTorr to about 50 mTorr, anda temperature of the sputtering can be in a range from about −20° C. toabout 120° C. A power of the plasma generator of the sputtering can bein a range from about 100 W to about 2,000 W, and a frequency of theplasma generator can be about 13.56 MHz or greater. The substrate can bebiased during the sputtering in a range from about 50 V to about 300 V.The sputtering can be directional (e.g., treats horizontal surfaces),although in some examples, the sputtering can be conformal. Thesputtering can cause argon to be deposited on the treated surfaces 70and/or embedded in the respective materials to a depth below the treatedsurfaces 70. For example, the species used for the sputtering (e.g.,argon) can be embedded into the materials that form the treated surface70 (e.g., the conductive via 60, the second ESL 30, the liners 52 in thetrench 40, and the third dielectric layer 32) to a depth of therespective materials from the treated surfaces 70 equal to or less thanabout 2 nm and at a concentration in a range from about 1×10¹⁸ cm⁻³ toabout 1×10¹⁹ cm⁻³. The concentration of the species can decrease from apeak proximate to the respective treated surfaces 70 to a depth in thematerial. The sputtering can break bonds by the species colliding withatoms of the material that is exposed (e.g., the treated surfaces 70).

In another example, the nucleation enhancement treatment is a beam lineimplantation (operation 226). The species implemented for the beam lineimplantation can include silicon (Si), germanium (Ge), carbon (C),nitrogen (N), argon (Ar), the like, or a combination thereof. Animplantation energy can be in a range from about 2 keV to about 10 keV.A dosage of the implantation can be in a range from about 10¹³ cm⁻² toabout 2×10¹⁵ cm⁻². The implantation can be to a depth from a respectiveexposed surface in a range from about 1 nm to about 4 nm and to aconcentration of the implanted species in a range from about 5×10¹⁸ cm⁻³to about 5×10²¹ cm⁻³. The concentration of the species can decrease froma peak proximate to the respective treated surfaces 70 to a depth in thematerial. The beam line implantation can be directional, although insome examples, multiple implantations may be performed to achieve a moreconformal treatment. The beam line implantation can break bonds by theimplanted species colliding with atoms of the material that is implanted(e.g., the treated surfaces 70).

In a further example, the nucleation enhancement treatment is a plasmatreatment (operation 228). The plasma treatment can include using a gascomprising xenon (Xe), argon (Ar), hydrogen (H₂), nitrogen (N₂), thelike or a combination thereof. A flow rate of the gas can be in a rangefrom about 10 sccm to about 2,000 sccm. A pressure of the plasmatreatment can be in a range from about 10 mTorr to about 100 mTorr, anda temperature of the plasma treatment can be in a range from about −20°C. to about 60° C. A power of the plasma generator of the plasmatreatment can be in a range from about 20 W to about 200 W, and afrequency of the plasma generator can be about 13.56 MHz or greater. Thesubstrate during the plasma treatment can be biased in a range fromabout 50 V to about 300 V. The species of the plasma can damage theexposed surfaces and can diffuse into the exposed surfaces. The plasmatreatment can be conformal or directional. The plasma treatment cancause the species of the plasma to be embedded on the treated surfaces70 and/or diffused in the respective materials to a depth below thetreated surfaces 70. For example, the species used for the plasma (e.g.,xenon, argon, hydrogen, etc.) can be diffused into the materials thatform the treated surface 70 (e.g., the conductive via 60, the second ESL30, the liners 52 in the trench 40, and the third dielectric layer 32)to a depth of the respective materials from the treated surface 70 equalto or less than about 5 nm and at a concentration in a range from about1×10¹⁸ cm⁻³ to about 1×10²⁰ cm⁻³. The concentration of the species candecrease from a peak proximate to the respective treated surfaces 70 toa depth in the material.

In a yet further example, the nucleation enhancement treatment is a UVtreatment (operation 230). The UV treatment can include exposing thesubstrate to UV light in an ambient. The ambient can include a gascomprising argon (Ar), neon (Ne), xenon (Xe), the like, or a combinationthereof. An energy of the UV light exposure can be in a range from about3.4 eV to about 10 eV. A duration of the UV light exposure can be equalto or less than about 300 seconds, such as in a range from about 15seconds to about 300 seconds. The UV treatment can cause bonds on theexposed surfaces to break thereby damaging the exposed surfaces. Thespecies of the ambient during the UV treatment can diffuse into theexposed surfaces. For example, the species of the ambient (e.g., xenon,argon, neon, etc.) can diffuse into the materials that form the treatedsurface 70 (e.g., the conductive via 60, the second ESL 30, the liners52 in the trench 40, and the third dielectric layer 32) to a depth ofthe respective materials from the treated surface 70 equal to or lessthan about 5 nm. A concentration of the species can decrease from a peakproximate to the respective treated surfaces 70 to a depth in thematerial. The UV treatment can be directional, although in someexamples, multiple UV treatment may be performed to achieve a moreconformal treatment.

In an even further example, the nucleation enhancement treatment isplasma doping (operation 232). The species implemented for the plasmadoping can include boron (B), argon (Ar), the like, or a combinationthereof. The doping can be to a depth from a respective exposed surfacein a range from about 1 nm to about 5 nm and to a concentration in arange from about 1×10¹⁹ cm⁻³ to about 1×10²⁰ cm⁻³. The concentration ofthe species can decrease from a peak proximate to the respective treatedsurfaces 70 to a depth in the material. The plasma doping can breakbonds by the implanted species colliding with atoms of the material thatis implanted (e.g., the treated surfaces 70).

FIG. 8 and operation 234 of the method 200 illustrates the formation ofa conductive fill material 80 on the treated surfaces 70, e.g., fillingthe trench 40. The formation of the conductive fill material 80 may beby a deposition process that deposits the conductive fill material 80 ondielectric surfaces as well as metallic surfaces. The nucleationenhancement treatment described with respect to FIG. 7 can createnucleation sites on dielectric surfaces (e.g., on the treated surfaces70) on which the conductive fill material 80 can be adsorbed duringdeposition. Hence, the deposition of the conductive fill material 80 canbe a bottom-up deposition and/or a conformal deposition, such asdepending on the directionality of the nucleation enhancement treatment.In a bottom-up deposition, seams can be avoided by having a singlegrowth front of the conductive fill material 80 that propagatesvertically in the trench 40.

As a result of a conformal deposition, seams 82 can be formed in theconductive fill material 80 in the trench 40. The seams 82 can resultfrom the merging or coalescing of different growth fronts of theconductive fill material 80 during the conformal deposition. Forexample, a growth front originating from a sidewall surface of the liner52 along a sidewall of the third dielectric layer 32 can coalesce ormerge with a growth front originating from a top surface of the secondESL 30 to form at least a portion of a seam 82. The seams 82 may eachinclude, for example, one or more voids, grain boundaries of theconductive fill material 80, and/or other indications of the coalescingor merging of growth fronts. A seam 82 can have an angle 86 with respectto a vertical direction (e.g., perpendicular to the top surface of thesecond ESL 30). The angle 86 can be in a range from about 25° to about75°, and more particularly, from about 30° to about 60°. The angle 86can be affected by the proximity of the sidewall surface of the liner 52to the conductive via 60. In some examples, the growth rate of theconductive fill material 80 is greater from the conductive via 60 thanfrom dielectric surfaces, such as the sidewall of the liner 52, such asby about two to about three times. Hence, in such examples, the closerthe sidewall of the liner 52 is to the conductive via 60, the smallerthe angle 86 may be.

In some examples, the deposition of the conductive fill material 80includes using a CVD, an electroless plating or deposition, or anotherdeposition process. The ill material 80 can be or include a metal, suchas ruthenium (Ru), nickel (Ni), molybdenum (Mo), cobalt (Co), tungsten(W), copper (Cu), the like, or a combination thereof. In some examples,the conductive fill material 80 is or includes ruthenium (Ru),molybdenum (Mo), cobalt (Co), or tungsten (W) deposited by CVD. Exampleprecursors for ruthenium include triruthenium dodecacarbonyl(Ru₃(CO)₁₂), CHORUS, the like, or a combination thereof. Exampleprecursors for molybdenum include molybdenum(V) chloride (MoCl₅),Mo(CO)₅, the like, or a combination thereof. Example precursors forcobalt include dicobalt hexacarbonyl tert-butylacetylene (CCTBA), thelike, or a combination thereof. Example precursors for tungsten includetungsten hexafluoride (WF₆), tungsten(V) chloride (WCl₅), the like, or acombination thereof. A flow rate of the precursor gas during the CVD canbe in a range from about 10 sccm to about 200 sccm, and a flow rate of acarrier gas (e.g., argon (Ar)) can be in a range from about 100 sccm toabout 800 sccm. A pressure of the CVD can be in a range from about 0.2mTorr to about 20 mTorr. A temperature of the CVD can be less than orequal to about 175° C., such as in a range from 120° C. to 170° C.(particularly for ruthenium deposition, for example). In other examples,nickel can be deposited using electroless plating or deposition. Ananneal or reflow may be performed after the conductive fill material 80is deposited.

In some examples, a silicide and/or a carbide can be formed along thetreated surfaces 70 of dielectric material that includes silicon and/orcarbon, respectively. For example, assuming that the liner 52 and secondESL 30 include silicon, the nucleation enhancement treatment can causethe silicon to have a dangling bond at the treated surfaces 70, and ametal of the conductive fill material 80 can attach to the dangling bondand/or react with the silicon of the treated surfaces 70 to form asilicide at an interface between the conductive fill material 80 and theliner 52 or second ESL 30. The metal of the conductive fill material 80can attach to the dangling bond and/or react with the silicon of thetreated surfaces 70 during the deposition of the conductive fillmaterial 80 (e.g., when a precursor is flowed on the treated surfaces70) and/or subsequent to the deposition of the conductive fill material80. Similarly, for example, assuming that the liner 52 and second ESL 30include carbon, the nucleation enhancement treatment can cause thecarbon to have a dangling bond at the treated surfaces 70, and a metalof the conductive fill material 80 can attach to the dangling bondand/or react with the carbon of the treated surfaces 70 to form acarbide (e.g., a metal carbide) at an interface between the conductivefill material 80 and the liner 52 or second ESL 30. The metal of theconductive fill material 80 can attach to the dangling bond and/or reactwith the carbon of the treated surfaces 70 during the deposition of theconductive fill material 80 (e.g., when a precursor is flowed on thetreated surfaces 70) and/or subsequent to the deposition of theconductive fill material 80. With the dangling and/or broken bonds ofthe silicon and/or carbon of the treated surfaces 70, a silicide and/orcarbide can be formed at the treated surfaces 70 to enhance nucleationof the conductive fill material 80 and to promote adhesion of theconductive fill material 80 to dielectric layers, such as the liner 52and the second ESL 30.

In some examples, a metal of the conductive via 60 may form a metalalloy or compound with a metal of the conductive fill material 80 at thetreated surface 70 of the conductive via 60. The nucleation enhancementtreatment may break bonds at the treated surface 70 of the conductivevia 60 to permit the mixing and/or reacting of metals of the conductivevia 60 and the conductive fill material 80 at the treated surface 70 ofthe conductive via 60. The metal of the conductive fill material 80 canmix and/or react with the metal of the conductive via 60 at the treatedsurfaces 70 during the deposition of the conductive fill material 80(e.g., when a precursor is flowed on the treated surfaces 70) and/orsubsequent to the deposition of the conductive fill material 80. Theconductive via 60 and the conductive fill material 80 may beelectrically connected without significant resistance caused by thespecies used in the nucleation enhancement treatment to form the treatedsurface 70.

Even further, in some examples, a species used in the nucleationenhancement treatment may be embedded in or on the treated surfaces 70,such as by adsorption, diffusion, and/or implantation, and the speciesmay react with the conductive fill material 80. For example, silicon orgermanium implanted in the treated surfaces 70 can react with a metal ofthe conductive fill material 80 to form a metal-semiconductor compound(e.g., silicide or germanocide, respectively). As another example,carbon implanted in the treated surfaces 70 can react with a metal ofthe conductive fill material 80 to form a metal carbide, or nitrogenimplanted in the treated surfaces 70 can react with a metal of theconductive fill material 80 to form a metal nitride. Other compounds canbe formed in other examples.

In some examples, a species used in the nucleation enhancement treatmentmay be embedded in or on the treated surfaces 70 and may remainun-reacted with other material. For example, inert species, such asargon, can remain un-reacted at or proximate to the treated surfaces 70.Un-reacted species can diffuse into the respective dielectric layers.Depending on the nucleation enhancement treatment, a highestconcentration of the un-reacted species may be at the treated surface 70(e.g., of a dielectric layer or the conductive via 60) and decrease fromthe treated surface 70 in a direction into the respective dielectriclayer or the conductive via 60, or can increase from the treated surface70 in a direction into the respective dielectric layer or the conductivevia 60 to a peak concentration before decreasing along that direction,such as when the species is implanted by beam line implantation, plasmadoping, or a similar technique.

The extent to which a species used in the nucleation enhancementtreatment may be embedded in or on different treated surfaces 70 maydepend on the directionality of the nucleation enhancement treatment.For example, a highly directional nucleation enhancement treatment, suchas a beam line implantation, can cause some surfaces to have more of thespecies embedded therein or thereon than other surfaces. Specifically,in some examples, horizontal surfaces (e.g., a top surface of the secondESL 30) can have more of the species embedded therein or thereon thanvertical surfaces (e.g., sidewalls of the liner 52). In some examples,multiple directional nucleation enhancement treatments can be performedat different directions to obtain a more even treatment betweendifferent surfaces, such as multiple beam line implantations atdifferent implant angles.

FIG. 9 illustrates the removal of excess conductive fill material 80 toform a conductive line 84 in the third dielectric layer 32. Excessconductive fill material 80 and the treated surface 70 of the thirddielectric layer 32 can be removed using a planarization process, suchas a CMP. The third dielectric layer 32 may further be thinned by theplanarization process, which may remove the rounded corners of thetrench 40 in some examples. The third dielectric layer 32 is thinned toa thickness in a range from about 10 nm to about 30 nm in some examples.The removal of the excess conductive fill material 80 and treatedsurface 70 of the third dielectric layer 32 can form the top surfaces ofthe conductive fill material 80 and the third dielectric layer 32 to becoplanar. The seams 82, as described above, can remain in the conductiveline 84. In some examples, the seams 82 may be cured or removed by ananneal or other thermal process used during processing. An interconnectstructure, such as a dual damascene interconnect structure, can beformed, as illustrated in FIG. 9, comprising a conductive via 60 and aconductive line 84.

FIG. 10 illustrates the formation of a third ESL 90 and fourthdielectric layer 92 over the third dielectric layer 32, conductive line84, and liner 52 along the sidewalls of the trench 40, and with aconductive feature 94 through the third ESL 90 and fourth dielectriclayer 92 contacting the conductive line 84. The third ESL 90 can bedeposited on the third dielectric layer 32, conductive line 84, andliner 52. The third ESL 90 may comprise or be silicon nitride, siliconcarbon nitride, silicon carbon oxide, carbon nitride, the like, or acombination thereof, and may be deposited by CVD, PECVD, ALD, or anotherdeposition technique. The fourth dielectric layer 92 is deposited overthe third ESL 90. For example, the fourth dielectric layer 92 may be orinclude an IMD. The fourth dielectric layer 92, for example, may be orcomprise a low-k dielectric having a k-value less than about 4.0, suchas about 2.0 or even less. In some examples, the fourth dielectric layer92 comprises silicon oxide, PSG, BPSG, FSG, SiO_(x)C_(y), silicon carbonmaterial, a compound thereof, a composite thereof, or a combinationthereof. The fourth dielectric layer 92 may be deposited using a CVD,such as PECVD or FCVD; spin-on coating; or another deposition technique.In some examples, a CMP or another planarization process may beperformed to planarize the top surface of the fourth dielectric layer92.

The conductive feature 94 contacting the conductive line 84 may be orinclude, for example, a conductive via or another conductive feature.The conductive feature 94 may be formed using a damascene process, suchas a dual damascene process. For example, the conductive feature 94 maybe formed using the process described above with respect to andillustrated in FIGS. 2 through 9 or using a similar process.

As is apparent from the foregoing, a seed layer and a metal-containingbarrier layer are not deposited in the described examples for formingthe conductive via 60 and conductive line 84. In the illustrated anddescribed examples, no seed layer and no metal-containing barrier layeris deposited (i) between the conductive line 84 and any dielectric layeron or in which it is disposed (e.g., the third dielectric layer 32 orsecond ESL 30), (ii) between the conductive via 60 and any dielectriclayer in which it is disposed (e.g., the second ESL 30, seconddielectric layer 28, or first ESL 26), or (iii) between the conductivevia 60 and the conductive line 84. Some embodiments can implement a seedlayer and/or a metal-containing barrier layer. Further, although aspecies of the nucleation enhancement treatment may react with a metalof the conductive line 84 (e.g., the conductive fill material 80) and/orthe conductive via 60, such as at the treated surface 70 of theconductive via 60 (e.g., an interface between the conductive via 60 andthe conductive line 84), the resulting material may be thinner and/orhave a lower concentration of the species than a deposited barrierlayer, and hence, may, in some instances, not be a diffusion barrier.For example, in some examples implementing a nucleation enhancementtreatment, the species can have a concentration of less than or equal toabout 5 atomic percent (at. %), such as in a range from about 0.1 at. %to about 5 at. %, in the conductive line 84 (e.g., the conductive fillmaterial 80) and/or the conductive via 60 at the respective treatedsurfaces. The concentration of the species in the conductive line 84(e.g., the conductive fill material 80) and/or the conductive via 60 canbe discontinuous because of the low concentration of the speciestherein. Further, the species and conductive material of the conductiveline 84 and/or the conductive via 60 may not be in a stable phase of acorresponding compound of the materials (e.g., a metal compound).

FIGS. 13 through 18 illustrate various details and/or modifications to aportion of the cross-sectional view of the intermediate structure ofFIG. 6, in accordance with some embodiments. FIGS. 13 through 18illustrate additional details and/or modifications to the via opening 42formed in FIG. 2 and the corresponding conductive via 60 formed in thevia opening 42 in FIGS. 5 and 6. FIGS. 13 through 18 each illustrate thefirst ESL 26 over the conductive feature 24, the second dielectric layer28 over the first ESL 26, and the second ESL 30 over the seconddielectric layer 28. Although the via opening 42 is not specificallyidentified in FIGS. 13 through 18, a person having ordinary skill in theart will readily understand, upon viewing the figures, that sidewalls ofthe first ESL 26, second dielectric layer 28, and second ESL 30, betweenwhich the conductive via 60 is disposed, are sidewalls of the viaopening 42 formed in FIG. 2. The via opening 42 in FIGS. 13 through 18has a first dimension D1 (e.g., a depth) from a top surface of theconductive feature 24 exposed by the via opening 42 to the top surfaceof the second ESL 30. The first dimension D1 may correspond to acombined thickness of the first ESL 26, second dielectric layer 28, andsecond ESL 30. The first dimension D1 can be in a range from about 8 nmto about 40 nm, and more particularly, from about 10 nm to about 30 nm,such as about 25 nm.

In FIGS. 13 and 14, the via opening 42 has sidewalls (e.g., thesidewalls of the first ESL 26, second dielectric layer 28, and secondESL 30 on which the liner 52 is formed) that are substantially verticalwith rounding at upper corners. The via opening 42 has a seconddimension D2 (e.g., width) at a bottom of the via opening 42 (e.g., atthe top surface of the conductive feature 24) in FIGS. 13 and 14, andhas a third dimension D3 (e.g., width) in a plane of a top surface ofthe second ESL 30. The second dimension D2, in some examples, is in arange from about 8 nm to about 14 nm, and the third dimension D3, insome examples, is in a range from about 13 nm to about 19 nm. A firstaspect ratio of the first dimension D1 to the second dimension D2 can bein a range from about 0.7 to about 3.75, and a second aspect ratio ofthe first dimension D1 to the third dimension D3 can be in a range fromabout 0.53 to about 2.31.

In FIGS. 15 and 16, the via opening 42 has vertical sidewalls (e.g., thesidewalls of the first ESL 26, second dielectric layer 28, and secondESL 30 on which the liner 52 is formed are vertical). Hence, across-section of the via opening 42 is rectangular. The via opening 42has a sixth dimension D6 (e.g., width) at a bottom of the via opening 42(e.g., at the top surface of the conductive feature 24) in FIGS. 15 and16. The dimension (e.g., width) of the via opening 42 in a plane of atop surface of the second ESL 30 is equal to the sixth dimension D6 dueto the vertical sidewalls. The sixth dimension D6, in some examples, isin a range from about 8 nm to about 14 nm. An aspect ratio of the firstdimension D1 to the sixth dimension D6 can be in a range from about 0.7to about 3.75.

In FIGS. 17 and 18, the via opening 42 has non-vertical or slopedsidewalls (e.g., the sidewalls of the first ESL 26, second dielectriclayer 28, and second ESL 30 on which the liner 52 is formed arenon-vertical or are sloped). Hence, a cross-section of the via opening42 can have a positive taper profile, as illustrated, and in otherexamples, a cross-section of the via opening 42 can be a reentrantprofile. The via opening 42 has a ninth dimension D9 (e.g., width) at abottom of the via opening 42 (e.g., at the top surface of the conductivefeature 24) in FIGS. 17 and 18, and has a tenth dimension D10 (e.g.,width) in a plane of a top surface of the second ESL 30. The ninthdimension D9, in some examples, is in a range from about 8 nm to about14 nm, and the tenth dimension D10, in some examples, is in a range fromabout 13 nm to about 19 nm. A first aspect ratio of the first dimensionD1 to the ninth dimension D9 can be in a range from about 0.7 to about3.75, and a second aspect ratio of the first dimension D1 to the tenthdimension D10 can be in a range from about 0.53 to about 2.31.

In FIGS. 13, 15, and 17, the conductive via 60 has a convex uppersurface 100, 104, and 108 (e.g., convex meniscus) that protrudes abovethe top surface of the second ESL 30. A cross section of the convexupper surface 100, 104, and 108 can be a partial circle (e.g.,semi-circular), a partial ellipse (e.g., semi-ellipse), or anothershape. The convex upper surface 100, 104, and 108 can have an upper-mostpoint at a level above the top surface of the second ESL 30, forexample, and a bottom portion of the convex top surface can be at alevel above, at a level of, or at a level below the top surface of thesecond ESL 30. As illustrated, an upper-most point of the convex uppersurface 100, 104, and 108 protrudes above the top surface of the secondESL 30 by a fourth dimension D4, a seventh dimension D7, and an eleventhdimension D11, respectively. The fourth dimension D4, seventh dimensionD7, and an eleventh dimension D11 can be in a range from about 0 nm toabout the respective second dimension D2, sixth dimension D6, and ninthdimension D9. In other examples, an upper-most point of the convex uppersurface 100, 104, and 108 can be at a level of or at a level below thetop surface of the second ESL 30.

In FIGS. 14, 16, and 18, the conductive via 60 has a concave uppersurface 102, 106, and 110 (e.g., concave meniscus) that is below the topsurface of the second ESL 30. A cross section of the concave uppersurface 102, 106, and 110 can be a partial circle (e.g., semi-circular),a partial ellipse (e.g., semi-ellipse), or another shape. The concaveupper surface 102, 106, and 110 can have a lower-most point at a levelbelow the top surface of the second ESL 30. Upper portions of theconcave upper surface 102, 106, and 110 can be at a level above, at alevel of, or at a level below the top surface of the second ESL 30. Insome examples, a lower-most point of the concave upper surface 102, 106,and 110 is at a level above or at a level of the top surface of thesecond ESL 30. As illustrated, a lower-most point of the concave uppersurface 102, 106, and 110 is below the top surface of the second ESL 30by a fifth dimension D5, an eighth dimension D8, and a twelfth dimensionD12, respectively. The fifth dimension D5, eighth dimension D8, andtwelfth dimension D12 can each be in a range from about 0 nm to abouttwo-thirds of the first dimension D1 (e.g., (⅔)×D1). In furtherexamples, the top surface can have other shapes, such as being planar,and can be at any level with respect to the top surface of the secondESL 30 and/or another dielectric layer.

FIGS. 19 through 21 illustrate cross-sectional views of respectiveintermediate structures during an example method for forming aninterconnect structure in accordance with some other embodiments. FIGS.19 and 20 illustrate the performance of a cleaning process (operation210 of the method 200) on the intermediate interconnect structure ofFIG. 4 (e.g., after the completion of operations 202-208). The cleaningprocess in accordance with this embodiment is illustrated in furtherdetail in FIG. 21. In this embodiment, the cleaning process includes aplasma treatment (operation 260), followed by a halide soak (operation262), followed by a reduction treatment (operation 264).

In the embodiment shown, the conductive feature 24 is a multilayeredfeature that includes a main body 24A formed from a first material(e.g., cobalt) and a cap layer 24B formed from a second material (e.g.,tungsten). The cleaning process cleans the cap layer 24B of theconductive feature 24. In some embodiments, such as those describedabove, the conductive feature 24 is a single continuous metal layer(e.g., tungsten).

FIG. 19 illustrates the performance of a plasma treatment (operation260) and a halide soak (operation 262). The plasma treatment is used tophysically clean residue from the trench 40 and/or via opening 42. Thehalide soak is used to remove native oxides that may have formed onmetal features (e.g., the conductive feature 24) during processing.

The plasma treatment can include using a hydrogen (H₂) argon (Ar),helium (He), neon (Ne), O₂, O₃, N₂, or NH₃ gas with a carrier gas, suchas argon (Ar). A plasma sheath is generated, and the hydrogen isaccelerated across the plasma sheath to bombard the via opening 42. Theplasma treatment, in some instances, can reduce residual oxides,nitrides, and/or carbides that may be formed on sidewalls and/or bottomsurfaces of the trench 40 and/or via opening 42 during the etchprocesses for patterning the first ESL 26, second dielectric layer 28,second ESL 30, third dielectric layer 32, and/or liner layer 50. A flowrate of the hydrogen gas in the plasma treatment can be in a range fromabout 5 sccm to about 1,000 sccm, and a flow rate of the carrier gas inthe plasma treatment can be in a range from about 0 sccm to about 1,000sccm. A pressure of the plasma treatment can be in a range from about 10mTorr to about 200 mTorr. A temperature of the plasma treatment can bein a range from about −20° C. to about 100° C. A power of the plasmagenerator of the plasma treatment can be in a range from about 20 W toabout 400 W, and a frequency of the plasma generator can be about 13.56MHz or greater. The substrate during the plasma treatment can be biasedin a range from about 20 V to about 200 V. The plasma treatment may beperformed for a short duration. In particular, the plasma treatment maybe performed for a duration sufficient to physically clean residue fromthe trench 40 and/or via opening 42, but may not be performed for a longenough duration to remove native oxides that may have formed on theconductive feature 24. For example, in some embodiments, a duration ofthe plasma treatment can be in a range from about 5 seconds to about 300seconds. Performing the plasma treatment for a short duration reducesthe risk of damaging the profile of the via opening 42 or the conductivefeature 24 during the plasma treatment.

The halide soak includes exposing the conductive feature 24 to one ormore soaking agent(s). The soaking agent(s) are halides of the materialof the conductive feature 24. In some embodiments, the soaking agent(s)are chlorides or fluorides of the material of the conductive feature 24.For example, in embodiments where the conductive feature 24 is formedfrom tungsten (W), the halide is tungsten hexafluoride (WF₆). Likewise,in embodiments where the conductive feature 24 has a silicide (e.g.,TiSi) formed thereon, the halide may be titanium tetrachloride (TiCl₄),titanium tetrafluoride (TiF₄), or a combination thereof. In someembodiments, one or more of the precursors used to form conductivefeature 24 may also be used as the soaking agent(s). Continuing theexample where the conductive feature 24 is formed from tungsten, thesame precursor (e.g., WF₆) may be used for both deposition of theconductive feature 24 and soaking of the conductive feature 24. Thehalide soak is performed in a processing chamber, which in someembodiments is the same processing chamber used to deposit the materialof the conductive feature 24. A pressure of the halide soak can be in arange from about 1 Torr to about 10 Torr. A temperature of the halidesoak can be in a range from about 300° C. to about 450° C. A duration ofthe halide soak can be in a range from about 5 seconds to about 120seconds.

The halide soak removes native oxides that may have formed on theconductive feature 24. In particular, the halide soaking agent(s)convert the solid phase native oxide to a gas phase oxide, which is thenevacuated from the via opening 42 and trench 40. Continuing the examplewhere the conductive feature 24 is formed from tungsten, tungsten oxidemay be formed on the exposed surface of the conductive feature 24 duringprocessing according to:W+1.50₂→W0₃.  (1)Exposing the tungsten oxide to the halide soaking agent(s) converts itto tungsten oxide fluoride according to:2W0₃+WF₆→3W0₂F₂.  (2)The resulting tungsten oxide fluoride gas may then be evacuated from theprocessing chamber. Evacuation may be accomplished by, e.g., flowing aninert gas (e.g., Ar) through the processing chamber to carry away thetungsten oxide fluoride. Removing the native oxides from the exposedsurface of the conductive feature 24 with a halide soak may reducedamage caused to the conductive feature 24 during the removal of thenative oxides. Further, the halide soaking agent(s) may etch theconductive feature 24 without substantially etching the first ESL 26,second dielectric layer 28, second ESL 30, third dielectric layer 32, orliner layer 50. As such, the halide soak may allow the exposed surfaceof the conductive feature 24 to be cleaned without substantiallydamaging the profile of the via opening 42. The processing window forthe cleaning process may thus be improved, particularly when the widthof the via opening 42 is less than about 10 nm. Further, avoiding damageto the profile of the via opening 42 may reduce the chances of voidsbeing formed in the via opening 42 during the formation of theconductive via 60 (see FIG. 5).

After the halide soak, some residue 112 may remain in the via opening42. The residue 112 may be residue of the soaking agent(s) themselves,or may be residual byproducts of the soak. Continuing the example wherethe conductive feature 24 is formed from tungsten, the residue 112 maybe WF₆, W, F, or WO₂F₂. The residue 112 may be along the sidewallsand/or the bottom of the via opening 42.

FIG. 20 illustrates the performance of a reduction treatment (operation264). The reduction treatment includes exposing the conductive feature24 to one or more reducing agent(s), such as H₂. Exposure to thereducing agent(s) allows additional material of the conductive feature24 (e.g., the material of the cap layer 24B) to be selectivelyredeposited in the via opening 42. The reducing agent(s) react with theresidue 112, such as with residual halide soaking agent(s), to form theadditional material of the conductive feature 24. The amount of residue112 in the via opening 42 may thus be reduced. Continuing the examplewhere the conductive feature 24 is formed from tungsten, the halidesoaking agent(s) and residue 112 may include WF₆, and the additionalmaterial of the conductive feature 24 may be formed according to:WF₆+3H₂→W+6HF.  (3)The reduction treatment may be performed at a low pressure and a lowtemperature. A pressure of the reduction treatment can be in a rangefrom about 100 mTorr to about 300 mTorr. A temperature of the reductiontreatment can be in a range from about 300° C. to about 400° C. Aduration of the reduction treatment can be in a range from about 5seconds to about 60 seconds.

The redeposited portion of the conductive feature 24 (e.g., the caplayer 24B) extends at least partially up into the via opening 42. Theredeposited portion of the conductive feature 24 has a thirteenthdimension D13 from a bottom surface of the first ESL 26 to a top surfaceof the conductive feature 24. The thirteenth dimension D13, in someexamples, is in a range from about 2 nm to about 15 nm, such as lessthan about 5 nm. In some embodiments, the conductive feature 24 has anoriginal height having a fourteenth dimension D14, which in someexample, is in a range from about 10 nm to about 50 nm. The thirteenthdimension D13 may be in a range from about 5% to about 40% of thefourteenth dimension D14.

After the reduction treatment, subsequent processing as discussed abovemay be performed to produce the interconnect structure. Details offurther processing will not be repeated herein. FIG. 22 illustrates aresulting interconnect structure after the subsequent processing (e.g.,after the completion of operations 216-234). The interconnect structureof FIG. 22 is similar to the interconnect structure of FIG. 10, andincludes some residue 112 of the soaking agent(s) around the conductivevia 60. Further, the redeposited portion of the conductive feature 24contacts portions of the sidewalls of the liners 52, and the bottomsurfaces of the liners 52 are below the bottom surface of the conductivevia 60. The interface of the conductive feature 24 and conductive via 60may be below, level with, or above the top surface of the first ESL 26.Although some residue 112 is illustrated as being at the interface ofthe conductive feature 24 and conductive via 60, it should beappreciated that some or all of the residue 112 at the interface may beconsumed by the reduction treatment (operation 264). Sidewalls of theconductive via 60 may have more residue 112 than the interface of theconductive feature 24 and conductive via 60. In some embodiments, noresidue 112 remains at the interface of the conductive feature 24 andconductive via 60.

Although the resulting interconnect structure of FIG. 22 is similar tothe interconnect structure of FIG. 10, it should be appreciated that thecleaning process illustrated in FIG. 21 may be applicable to otherembodiments. For example, the resulting interconnect structure mayinstead be similar to the embodiments of FIGS. 13 through 18.

Some embodiments may achieve advantages. Performing a halide soak aspart of the cleaning process for the via opening 42 allows the durationof plasma treatment to be reduced, which may reduce damage caused to theprofile of the via opening 42 by the cleaning process. The chances offorming voids in the conductive via 60 may thus be reduced. Removingnative oxides from the conductive feature 24 with a halide soak andredepositing additional material of the conductive feature 24 with areduction treatment may create a clean (e.g., oxide-free) surface onwhich the conductive via 60 may be formed, reducing the resistance ofthe interconnect structure. As previously described, a seed layer and/orbarrier layer may be obviated by some embodiments. Without a seed layerand/or barrier layer, resistance of an interconnect structure can bereduced, thereby reducing a resistance-capacitance (RC) delay andincreasing device speed. Further, deposition of a conductive fillmaterial in forming the interconnect structure may be by a bottom-updeposition and/or a conformal deposition as a result of the nucleationenhancement treatment. The bottom-up deposition and/or conformaldeposition can decrease an amount of time to fill a trench, which canincrease throughput during processing and decrease costs. Exampleembodiments may be applied at any technology node, and may beparticularly applicable to advanced technology nodes, such as 20 nm andsmaller.

In an embodiment, a method includes: etching an interconnect openingthrough one or more dielectric layers over a semiconductor substrate,the interconnect opening having a via opening and a trench over the viaopening, the via opening exposing a conductive feature over thesemiconductor substrate, the conductive feature including a first layerof a first conductive material; treating the via opening with a plasmato physically remove etching residue from sidewalls and a bottom of thevia opening; soaking the conductive feature with a halide of the firstconductive material, residual halide of the first conductive materialremaining in the via opening after the soaking; reducing the residualhalide of the first conductive material to form a second layer of thefirst conductive material on the first layer; depositing a conductivevia in the via opening on the second layer of the first conductivematerial; and forming a conductive line in the trench on one or moreexposed dielectric surfaces of the trench and on the conductive via.

In some embodiments of the method, the first conductive material istungsten, and the halide of the first conductive material is tungstenhexafluoride. In some embodiments of the method, reducing the residualhalide of the first conductive material includes exposing the residualhalide to hydrogen. In some embodiments of the method, forming theconductive line includes conformally depositing a material of theconductive line in the trench on the one or more exposed dielectricsurfaces. In some embodiments of the method, depositing the material ofthe conductive line does not include depositing a seed layer fordepositing the material of the conductive line. In some embodiments ofthe method, no metal-containing barrier layer is deposited in theinterconnect opening before depositing the material of the conductiveline. In some embodiments, the method further includes: performing anucleation enhancement treatment on the one or more exposed dielectricsurfaces of the trench before depositing the material of the conductiveline. In some embodiments of the method, the nucleation enhancementtreatment increases a number of nucleation sites on surfaces of thedielectric layers exposed in the trench by breaking chemical bonds ofthe surfaces of the dielectric layers exposed in the trench.

In an embodiment, a method includes: etching an interconnect openingthrough one or more dielectric layers over a semiconductor substrate,the interconnect opening having a via opening and a trench over the viaopening, the via opening exposing a conductive feature over thesemiconductor substrate, the conductive feature including a conductivematerial; cleaning the via opening; depositing a conductive via in thecleaned via opening; performing a nucleation enhancement treatment onone or more exposed dielectric surfaces of the trench; and forming aconductive line in the trench on the one or more exposed dielectricsurfaces of the trench and on the conductive via.

In some embodiments of the method, cleaning the via opening includes:cleaning the via opening with a halide of the conductive material. Insome embodiments of the method, etching the interconnect opening formsan etching residue in the via opening and forms a native oxide on asurface of the conductive feature, and cleaning the via openingincludes: removing the etching residue by treating the via opening witha plasma; and removing the native oxide by exposing the surface of theconductive feature to the halide of the conductive material. In someembodiments of the method, treating the via opening with the plasmaincludes: bombarding the via opening with hydrogen for a duration offrom about 5 seconds to about 300 seconds. In some embodiments of themethod, exposing the surface of the conductive feature includes: soakingthe surface of the conductive feature with the halide of the conductivematerial, residual halide remaining in the via opening after thesoaking. In some embodiments, the method further includes: redepositingadditional conductive material on the conductive feature by exposing thesurface of the conductive feature to a reducing agent. In someembodiments of the method, exposing the surface of the conductivefeature to the reducing agent includes: reducing residual halide withhydrogen, the reduced residual halide forming the additional conductivematerial. In some embodiments, the method further includes: depositingthe conductive feature over the semiconductor substrate with a pluralityof precursors for the conductive material, the halide of the conductivematerial being one of the precursors for the conductive material. Insome embodiments of the method, the nucleation enhancement treatmentincreases a number of nucleation sites on the exposed dielectricsurfaces of the trench by breaking chemical bonds of the exposeddielectric surfaces of the trench. In some embodiments of the method,forming the conductive line includes conformally depositing a materialof the conductive line in the trench on the exposed dielectric surfacesof the trench without depositing a seed layer for the material of theconductive line.

In an embodiment, a method includes: depositing a conductive featureover a substrate, the depositing including providing a plurality ofprecursors for a first conductive material; depositing one or moredielectric layers over the conductive feature; etching an interconnectopening through the one or more dielectric layers, the interconnectopening having a via portion and a line portion over the via portion;cleaning sidewalls and bottom surfaces of the interconnect opening witha halide of the first conductive material, the halide of the firstconductive material being one of the precursors for the first conductivematerial; depositing a conductive via in the via portion of the cleanedinterconnect opening, the conductive via contacting the conductivefeature; and depositing a conductive line in the line portion of thecleaned interconnect opening.

In some embodiments, the method further includes: after cleaning theinterconnect opening, depositing a layer of the first conductivematerial on the conductive feature in the cleaned interconnect opening.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: etching an interconnectopening through one or more dielectric layers over a semiconductorsubstrate, the interconnect opening having a via opening and a trenchover the via opening, the via opening exposing a conductive feature overthe semiconductor substrate, the conductive feature comprising a firstlayer of a first conductive material; treating the via opening with aplasma to physically remove etching residue from sidewalls and a bottomof the via opening; soaking the conductive feature with a halide of thefirst conductive material, residual halide of the first conductivematerial remaining in the via opening after the soaking; reducing theresidual halide of the first conductive material to form a second layerof the first conductive material on the first layer; depositing aconductive via in the via opening on the second layer of the firstconductive material; and forming a conductive line in the trench on oneor more exposed dielectric surfaces of the trench and on the conductivevia.
 2. The method of claim 1, wherein the first conductive material istungsten, and the halide of the first conductive material is tungstenhexafluoride.
 3. The method of claim 1, wherein reducing the residualhalide of the first conductive material comprises exposing the residualhalide to hydrogen.
 4. The method of claim 1, wherein forming theconductive line comprises conformally depositing a material of theconductive line in the trench on the one or more exposed dielectricsurfaces.
 5. The method of claim 4, wherein depositing the material ofthe conductive line does not include depositing a seed layer fordepositing the material of the conductive line.
 6. The method of claim4, wherein no metal-containing barrier layer is deposited in theinterconnect opening before depositing the material of the conductiveline.
 7. The method of claim 4, further comprising: performing anucleation enhancement treatment on the one or more exposed dielectricsurfaces of the trench before depositing the material of the conductiveline.
 8. The method of claim 7, wherein the nucleation enhancementtreatment increases a number of nucleation sites on surfaces of thedielectric layers exposed in the trench by breaking chemical bonds ofthe surfaces of the dielectric layers exposed in the trench.
 9. A methodcomprising: etching an interconnect opening through one or moredielectric layers over a semiconductor substrate, the interconnectopening having a via opening and a trench over the via opening, the viaopening exposing a conductive feature over the semiconductor substrate,the conductive feature comprising a conductive material, wherein etchingthe interconnect opening forms an etching residue in the via opening andforms a native oxide on a surface of the conductive feature; cleaningthe via opening comprising: removing the etching residue by treating thevia opening with a plasma; and removing the native oxide by exposing thesurface of the conductive feature to a halide of the conductivematerial; depositing a conductive via in the cleaned via opening;performing a nucleation enhancement treatment on one or more exposeddielectric surfaces of the trench; and forming a conductive line in thetrench on the one or more exposed dielectric surfaces of the trench andon the conductive via.
 10. The method of claim 9, wherein treating thevia opening with the plasma comprises: bombarding the via opening withhydrogen for a duration of from about 5 seconds to about 300 seconds.11. The method of claim 9, wherein exposing the surface of theconductive feature comprises: soaking the surface of the conductivefeature with the halide of the conductive material, residual halideremaining in the via opening after the soaking.
 12. The method of claim9, wherein cleaning the via opening further comprises: redepositingadditional conductive material on the conductive feature by exposing thesurface of the conductive feature to a reducing agent.
 13. The method ofclaim 12, wherein exposing the surface of the conductive feature to thereducing agent comprises: reducing residual halide with hydrogen, thereduced residual halide forming the additional conductive material. 14.The method of claim 9 further comprising: depositing the conductivefeature over the semiconductor substrate with a plurality of precursorsfor the conductive material, the halide of the conductive material beingone of the precursors for the conductive material.
 15. The method ofclaim 9, wherein the nucleation enhancement treatment increases a numberof nucleation sites on the exposed dielectric surfaces of the trench bybreaking chemical bonds of the exposed dielectric surfaces of thetrench.
 16. The method of claim 15, wherein forming the conductive linecomprises conformally depositing a material of the conductive line inthe trench on the exposed dielectric surfaces of the trench withoutdepositing a seed layer for the material of the conductive line.
 17. Themethod of claim 9, wherein the nucleation enhancement treatmentincreases a number of nucleation sites on the one or more exposeddielectric surfaces of the trench, and wherein forming the conductiveline comprises: adsorbing a conductive fill material of the conductiveline into the nucleation sites; and planarizing the conductive fillmaterial of the conductive line and an upper dielectric layer of the oneor more dielectric layers, wherein a top surface of the upper dielectriclayer and a lowest point of a top surface of the conductive fillmaterial are coplanar after the planarizing.
 18. The method of claim 9,wherein the conductive material is tungsten, and the halide of theconductive material is tungsten hexafluoride.
 19. A method comprising:depositing a conductive feature over a substrate, the depositingcomprising providing a plurality of precursors for a first conductivematerial; depositing one or more dielectric layers over the conductivefeature; etching an interconnect opening through the one or moredielectric layers, the interconnect opening having a via portion and aline portion over the via portion; cleaning sidewalls and bottomsurfaces of the interconnect opening with a halide of the firstconductive material, the halide of the first conductive material beingone of the precursors for the first conductive material; depositing aconductive via in the via portion of the cleaned interconnect opening,the conductive via contacting the conductive feature; and depositing aconductive line in the line portion of the cleaned interconnect opening.20. The method of claim 19 further comprising: after cleaning theinterconnect opening, depositing a layer of the first conductivematerial on the conductive feature in the cleaned interconnect opening.